Development of Industrial Methods of Position-Sensitive CsI(Na) Detector Production

TitleDevelopment of Industrial Methods of Position-Sensitive CsI(Na) Detector Production
Publication TypeJournal Article
Year of Publication2010
AuthorsBoyarintsev, AYu., Gektin, OV, Zosim, DI, Ivanov, OI, Shlyakhturov, VV, Gavrylyuk, VP
Short TitleNauka innov.
DOI10.15407/scin6.06.038
Volume6
Issue6
SectionScientific and Technical Innovative Projects of National Academy of Sciences of Ukraine
Pagination38-44
LanguageRussian
Abstract
Development and engineering of position sensitive radiation detectors on the base on CsI(Na) single crystals is described. It is shown that the line of innovations during development of both material and detector is the core for the new generation of radiation detector production. The main feature of the development is the multi functional approach to each technological step. The proposed approach has been tested at statistical series of 46 detectors.
KeywordsCsI(Na) scintillator, light output non-uniformity, long length positive sensitive radiation detector, radiation detection
References
1. Cirlin Ju.A., Globus M.E., Sysoeva E.P. Optimizacija detektirovanija gamma-izluchenija scintilljacionnymi kristallami. Moskva: Energoatomizdat, 1991 [in Russian].
2. Gavryluk V., Gektin A., Zosim D., Yankelevich V. Long Length Scintillators for the Position Sensitive Radiation Detectors. Abstracts Nuclear Science Symposium and Medical Imaging Conference. Lyon (France). 2000. P. 263.
3. Boyarintsev A., Gavryluk V., Gektin A., Zosim D. Position Sensitive Scintillators for Astrophysical Aplications. Proc.of the Int.Conf.on Inorganic Scintillators and their Industrial Applications (Scint-2005). Alushta (Ukraine). 2005. P. 164.
4. Gorileckij V.I., Grinev B.V., Zaslavskij B.G. i dr. Rost kristallov. Galogenidy shhelechnyh metallov. Har'kov: Akta, 2002 [in Russian].
5. Panova A.N. Neorganicheskie scintilljatory. Izv.AN. SSSR. Ser. Fiz. 1985, 49(10): 1994.
6. Tagaradzhan R., Urusovskaja A.A. Dvizhenie i razmnozhenie dislokacij v kristallah jodistogo cezija. FTT. 1965, 7(1): 88 [in Russian].
7. Kudin A., Sysoeva E.P., Sysoeva E.V., et al. Factors which define on alpha/gamma ratio in CsI:Tl crystals. Nucl. Instr. Meth. Phys. Res. 2005. A537. P. 105.
https://doi.org/10.1016/j.nima.2004.07.245
8. Blistanov A.A. Kristally kvantovoj i nelinejnoj optiki. Moskva: MISIS, 2000 [in Russian].
9. Patent 2017170 S1 RF, 5 G01 T 1/202. Sposob izgotovlenija shhelochno-galoidnyh scintilljatorov. Andrjushhenko L.A., Gershun A.S., Sotnikov V.T., Chernikov V.V. Institut monokristallov NAN Ukrainy. N 5006562/25 [in Russian].
10. Gektint A.V., Shiran N.V., Serebrjanyj V.A. Rol' vakansionnyh defektov v ljuminescencii CsI. Optika i spektroskopija. 1992, 22(5): 1061 [in Russian].
11. Morgenshtern Z.L. Svechenie neaktivirovannyh monokristallov CsI. Optika i spektroskopija. 1959. No 7. S. 231 [in Russian].
12. Babin V., Elango A., Kalder K., Zazubovich S. Effect of uniaxial stress on exciton luminescence in CsI crystals. Phys.Status.Solidi (b). 1999. 212. P. 185.
https://doi.org/10.1002/(SICI)1521-3951(199903)212:1<185::AID-PSSB185>3.0.CO;2-L
13. Boyarintsev A., Gayshan V., Gektin A., Zosim D. Mechanical deformation effect on CsI(Tl) scintillators efficiency. Nucl. Instr. Meth. Phys. Res. 2003. A505. P. 97.
14. Rogov V.V., Vetrov A.G., Bojarincev A.Ju. Razvitie tehnologii almaznogo mikrofrezerovanija detalej iz nemetalicheskih materialov. Sverhtverdye materialy. 2003. No 6: 85-86 [in Russian].
15. Rogov V.V., Dan'ko A.Ja., Senchishin V.G., Bojarincev A.Ju. Rezcy iz sapfira i rubina (α-Al2 O3 ) dlja lezvijnoj finishnoj obrabotki scintilljacionnyh materialov. Sverhtverdye materialy. 2006. No 2: 59 [in Russian].
16. Panova A.N., Grinev B.V., Lavrent'ev F.F. i dr. Rol' aktivatornyh i vakansionnyh centrov v zatuhanii gamma — scintilljacij kristallov CsI-Na. ZhPS. 2004, 71(4): 502 [in Russian].
17. Gektin A.V., Gavrylyuk V.P., Zosim D.I., Yankelevich V.L. Unidimensional Position Sensitive Detector. Functional Matherials. 2005, 12(1): 131-141.
18. Gwin R., Murray R. Phys. Rev. 1963. V. 131. P. 501.
https://doi.org/10.1103/PhysRev.131.501